School of Microelectronics,Xidian University,Xi’an,School of Microelectronics,Xidian University,Xi’an,Department of Missile Engineering, Shijiazhuang Campus, Army Engineering University, Shijiazhuang,Institute of Photonics and Photon-Technology, Northwest University, Xi’an,State Key Laboratory for Superlattices,Institute of Semiconductors,Chinese Academy of Sciences,State Key Laboratory for Superlattices,Institute of Semiconductors,Chinese Academy of Sciences
In As/Al Sb tw o-dimensional electron gas ( 2 DEG) structures w ere successfully grow n by M BE equipment. 2 DEG characteristics of samples w ere improved by optimizing the the thickness of Al Ga Sb buffer layer, the thickness of In As/Al Sb interface layer, and the thickness of Al Sb spacer. The In As/Al Sb 2 DEG structure sample w ith an electron mobility of 20 500 cm2/V·s and a sheet electron density of 2. 0 × 1012/cm2 w ere achieved w hen the thickness of Al Sb spacer is fixed at 5 nm. It provides a reference for the research and fabrication of In As/Al Sb HEMT.
CUI Xiao-Ran, LYU Hong-Liang, LI Jin-Lun, SU Xiang-Bin, XU Ying-Qiang, NIU Zhi-Chuan. Growth optimization of GaAs-based InAs/AlSb 2DEG structure[J]. Journal of Infrared and Millimeter Waves,2018,37(4):385~388Copy