Department of Physics, International Center for Quantum and Molecular Structures, and Material Genome Institute, Shanghai University,Department of Physics, Shanghai University,College of Materials Science and Engineering, Shenzhen University,State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology,State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology,State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology,Department of Physics, International Center for Quantum and Molecular Structures, and Material Genome Institute, Shanghai University,State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology,College of Materials Science and Engineering, Shenzhen University,Peter Grünberg Institute 9, JARA-FIT, Forschungszentrum Jülich
LIU Qiang, ZHAO Qing-Tai, CAI Jian-Hui, HE Jia-Zhu, WANG Yi-Ze, ZHANG Dong-Liang, LIU Chang, REN Wei, YU Wen-Jie, LIU Xin-Ke.86 mV/dec subthreshold swing of back-gated MoS2 FET on SiO2[J]. Journal of Infrared and Millimeter Waves,2017,36(5):543~549
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