Effects of flip-chip structure on the performance of THz detector with log periodic antenna
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Beijing Key Laboratory of Millimeter Wave and Terahertz Technology, School of Information and Electronics, Beijing Institute of Technology,Beijing Key Laboratory of Millimeter Wave and Terahertz Technology, School of Information and Electronics, Beijing Institute of Technology,Institute of Microelectronics, Chinese Academy of Sciences (IMECAS),School of Materials Science and Engineering, Beijing Institute of Technolog University,Beijing Key Laboratory of Millimeter Wave and Terahertz Technology, School of Information and Electronics, Beijing Institute of Technology,Beijing Key Laboratory of Millimeter Wave and Terahertz Technology, School of Information and Electronics, Beijing Institute of Technology

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    Abstract:

    This paper presents a novel flip-chip (FC) structure design for 340GHz Schottky diode detectors, which are designed and fabricated based on the gallium arsenide (GaAs) process. A ceramic thin-film supporting layer is used to provide a package for such detector. Conductive adhesive is typically used as attachment material between the antenna and output circuit. The behaviour of terahertz (THz) detectors with and without the novel FC structure was studied. For comparison, the FC structure model and wire bonding structure one (free of FC) were characterized using the same test system. A comparison analysis for the gains of the THz detector measured with and without the ceramic thin-film layer indicated that the novel FC structure offers a low-cost and practical solution for packaging the array of THz detectors.

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HAO Hai-Dong, SHI Jun-Yu, CHENG Li-Feng, ZHAO Xiu-Chen, WANG Bing, LV Xin. Effects of flip-chip structure on the performance of THz detector with log periodic antenna[J]. Journal of Infrared and Millimeter Waves,2017,36(4):593~596

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History
  • Received:December 25,2016
  • Revised:April 06,2017
  • Adopted:March 22,2017
  • Online: August 29,2017
  • Published: