Weak antilocalization effect in Tellurium-doped Bi2Se3 topological insulator nanowires
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Hubei Collaborative Innovation Center for High-efficiency Utilization of Solar Energy,Hubei University of Technology,Hubei Collaborative Innovation Center for High-efficiency Utilization of Solar Energy,Hubei University of Technology,Hefei National Laboratory for Physical Sciences at the Microscale,University of Science and Technology of China,Hefei National Laboratory for Physical Sciences at the Microscale,University of Science and Technology of China,Hubei Collaborative Innovation Center for High-efficiency Utilization of Solar Energy,Hubei University of Technology,Hubei Collaborative Innovation Center for High-efficiency Utilization of Solar Energy,Hubei University of Technology,Hubei Collaborative Innovation Center for High-efficiency Utilization of Solar Energy,Hubei University of Technology,School of Electrical and Electronic Engineering,Hubei University of Technology,National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences,National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences

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    Abstract:

    Single-crystalline Bi2Se3 and Bi2(TexSe1-x)3 nanowires were synthesized via Au catalytic vapor-liquid-solid (VLS) growth method. Electronic properties of the surface states in individual Bi2(TexSe1-x)3 (x=0.26) nanowire were studied by low-temperature magnetotransport measurement. Weak antilocalization (WAL) effect was found, suggesting strong spin-orbit coupling in our samples. It is indicated that the bulk effect can be suppressed effectively by the Tellurium (Te) doping. By fitting the magnetoconductance curves at magnetic field up to 7 T measured at different temperatures, the extracted dephasing length lφ decreases from 389 nm at 1.5 K to 39 nm at 20 K, which can be well described by the power law lφ∝T-0.96. It can be reasonably deduced that both the electron-electron scattering and the electron-phonon scattering play important roles in the Te-doped sample.

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TIAN Feng, ZHOU Yuan-Ming, ZHANG Xiao-Qiang, WEI Lai-Ming, MEI Fei, XU Jin-Xia, JIANG Yan, WU Lin-Zhang, KANG Ting-Ting, YU Guo-Lin. Weak antilocalization effect in Tellurium-doped Bi2Se3 topological insulator nanowires[J]. Journal of Infrared and Millimeter Waves,2017,36(3):270~275

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History
  • Received:November 14,2016
  • Revised:December 15,2016
  • Adopted:December 19,2016
  • Online: June 20,2017
  • Published: