Semiconductor lasers with broad spectra are crucial for sensing, spectroscopy and biomedical imaging, etc. Currently, the broadband semiconductor lasers are majority based on the broad gain material and total interface reflection (TIR) waveguide. It is still a challenge to realize the broadband semiconductor lasers based on the simple and mature quantum well (QW) material. In this paper, a new type broadband QW laser using Bragg reflection waveguide with a deviation angle from cleaving crystal faces was demonstrated. The device consists of the InGaAs/GaAs QWs, top and bottom Bragg reflectors. It was found that it shows the characteristics of superluminescent diode (SLD) with a spectrum width of 135 nm for the device with a deviation angle of 7°. The spectrum width of 33.7 nm was achieved with an emission power of 36 mW from one facet for a deviation angle of 4.4°. This work supplies a new possible approach for the development of high performance QW broadband lasers.