Low dimensional semiconductor hetero-structure photoelectric detecting materials and devices
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Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Institute of Semiconductors,Chinese Academy of Sciences,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Institute of Semiconductors,Chinese Academy of Sciences,Northwestern Polytechnical University

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    Abstract:

    The major national strategic demands such as the global climate observation, agricultural census, land resources exploration, environmental monitoring, deep space exploration and astronomical observation are facing the bottleneck of photodetectors. Semiconductor materials and its photodetectors are rapidly developing in the direction of full-spectrum, large-array and high sensitivity, which meets the development goals of the national "strategic advanced electronic materials". In the project, low dimensional semiconductor hetero-structure photoelectric materials and devices will be investigated. Materials are going to be artificially fine-tuned to promote the technological improvements of multi-bands and multi-types of photodetectors, which is useful for the development of economy, society, national security, science and technology.

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WANG Wen-Juan, LI Xue, LU Wei, GONG Hai-Mei, ZHU Hai-Jun, DING Rui-Jun, HAN Qin, WANG Tao. Low dimensional semiconductor hetero-structure photoelectric detecting materials and devices[J]. Journal of Infrared and Millimeter Waves,2016,35(6):766~768

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History
  • Received:August 26,2016
  • Revised:October 09,2016
  • Adopted:October 11,2016
  • Online: December 06,2016
  • Published:
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