Transfer process of LT-GaAs expitaxial films for on-chip terahertz antenna integrated device

doi:10.11972/j.issn.1001-9014.2017.02.016

Home > Archive>Volume 36, Issue 2, 2017 >220-224. DOI:10.11972/j.issn.1001-9014.2017.02.016

Transfer process of LT-GaAs expitaxial films for on-chip terahertz antenna integrated device
DOI:
                        10.11972/j.issn.1001-9014.2017.02.016
                    
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Affiliation:Key Laboratory of Ultra-fast Photoelectric Diagnostics Technology of CAS, Xi’an Institute of Optics and Precision Mechanics.University of Chinese Academy of Sciences,State Key Laboratory for Superlattices, Institute of Semiconductors, Chinese Academy of Sciences.University of Chinese Academy of Sciences,Laboratory for Solid State Photoelectric Information Technology, Institute of Semiconductors,State Key Laboratory for Superlattices, Institute of Semiconductors, Chinese Academy of Sciences,Key Laboratory of Ultra-fast Photoelectric Diagnostics Technology of CAS, Xi’an Institute of Optics and Precision Mechanics,Key Laboratory of Terahertz Optoelectronics, Ministry of Education, Department of Physics, Capital Normal University,Key Laboratory of Terahertz Optoelectronics, Ministry of Education, Department of Physics, Capital Normal University,Key Laboratory of Terahertz Optoelectronics, Ministry of Education, Department of Physics, Capital Normal University,State Key Laboratory for Superlattices, Institute of Semiconductors, Chinese Academy of Sciences
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Abstract:

A process for LT-GaAs used as photoconductive switch in epitaxial layer transfer of on-chip THz antenna integrated device was provided. Hall indicated resistivity of the epitaxial materials gained by MBE was about 106Ω·cm. HNO3-NH4OH-H2O-C3H8O7·H2O-H2O2-HCl and wet chemical etching were used to etch epitaxial materials grown by MBE. Gained the structure that 1.5μm LT-GaAs bounded with COP after lift-off of GaAs SISI-GaAs and Al0.9Ga0.1As. AFM、SEM and high-power microscope indicated that the structure was flat and smooth after lift-off. RMS=2.28nm. EDAX indicated there wasn’t Al in this structure. It can be used to make photoconductive switch.

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GUO Chun-Yan, XU Jian-Xing, PENG Hong-Ling, NI Hai-Qiao, WANG Tao, TIAN Jin-Shou, NIU Zhi-Chuan, WU Chao-Xin, ZUO Jian, ZHANG Cun-Lin. Transfer process of LT-GaAs expitaxial films for on-chip terahertz antenna integrated device[J]. Journal of Infrared and Millimeter Waves,2017,36(2):220~224

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Received:May 30,2016
Revised:September 28,2016
Adopted:June 29,2016
Online: April 28,2017
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