High-power, high-efficient GaSb-based quantum well laser diodes emitting at 2 μm
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State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductor, Chinese Academy of Sciences,Institute of Semiconductor, Chinese Academy of Sciences,Institute of Semiconductor, Chinese Academy of Sciences,Institute of Semiconductor, Chinese Academy of Sciences,Institute of Semiconductor, Chinese Academy of Sciences,Institute of Semiconductor, Chinese Academy of Sciences,Institute of Semiconductor, Chinese Academy of Sciences,Institute of Semiconductor, Chinese Academy of Sciences,Institute of Semiconductor, Chinese Academy of Sciences

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    Abstract:

    GaSb-based AlGaAsSb/InGaSb type-I quantum-wells (QW) 2 μm laser diodes (LDs) have been grown by MBE system. Stripe-type waveguide LDs with facets uncoated were fabricated and characterized. For single LD device, the maximum output power was 1.058 W under continuous wave (CW) operation at working temperature of 20℃. The maximum wall plug efficiency (WPE) was 20.2% and peak wavelength was 1.977 μm with injection current 0.5 A. The output power under pulse mode of 1000 Hz in 5% duty cycles was 2.278 W.

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LIAO Yong-Ping, ZHANG Yu, YANG Cheng-Ao, HUANG Shu-Shan, CHAI Xiao-Li, WANG Guo-Wei, XU Ying-Qiang, NI Hai-Qiao, NIU Zhi-Chuan. High-power, high-efficient GaSb-based quantum well laser diodes emitting at 2 μm[J]. Journal of Infrared and Millimeter Waves,2016,35(6):672~675

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History
  • Received:March 25,2016
  • Revised:April 19,2016
  • Adopted:April 22,2016
  • Online: December 07,2016
  • Published:
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