LIAO Yong-Ping
State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductor, Chinese Academy of SciencesZHANG Yu
Institute of Semiconductor, Chinese Academy of SciencesYANG Cheng-Ao
Institute of Semiconductor, Chinese Academy of SciencesHUANG Shu-Shan
Institute of Semiconductor, Chinese Academy of SciencesCHAI Xiao-Li
Institute of Semiconductor, Chinese Academy of SciencesWANG Guo-Wei
Institute of Semiconductor, Chinese Academy of SciencesXU Ying-Qiang
Institute of Semiconductor, Chinese Academy of SciencesNI Hai-Qiao
Institute of Semiconductor, Chinese Academy of SciencesNIU Zhi-Chuan
Institute of Semiconductor, Chinese Academy of SciencesState Key Laboratory for Superlattices and Microstructures, Institute of Semiconductor, Chinese Academy of Sciences,Institute of Semiconductor, Chinese Academy of Sciences,Institute of Semiconductor, Chinese Academy of Sciences,Institute of Semiconductor, Chinese Academy of Sciences,Institute of Semiconductor, Chinese Academy of Sciences,Institute of Semiconductor, Chinese Academy of Sciences,Institute of Semiconductor, Chinese Academy of Sciences,Institute of Semiconductor, Chinese Academy of Sciences,Institute of Semiconductor, Chinese Academy of Sciences
LIAO Yong-Ping, ZHANG Yu, YANG Cheng-Ao, HUANG Shu-Shan, CHAI Xiao-Li, WANG Guo-Wei, XU Ying-Qiang, NI Hai-Qiao, NIU Zhi-Chuan. High-power, high-efficient GaSb-based quantum well laser diodes emitting at 2 μm[J]. Journal of Infrared and Millimeter Waves,2016,35(6):672~675
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