0.5 μm InP/InGaAs DHBT for ultra high speed digital integrated circuit
CSTR:
Author:
Affiliation:

Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute

Clc Number:

Fund Project:

  • Article
  • |
  • Figures
  • |
  • Metrics
  • |
  • Reference
  • |
  • Related
  • |
  • Cited by
  • |
  • Materials
  • |
  • Comments
    Abstract:

    0.5μm InP/InGaAs DHBT with 350/533 GHz ft/fmax and two layers of interconnecting technology were developed for ultra high speed digital integrated circuit (IC) application. A static divide-by-2 frequency divider operating at 100 GHz was demonstrated. As the important parameters of gate delay, base-collector capacitance Ccb and Ccb/IC were analyzed. The value of Ccb/IC as low as 0.4 ps/V was achieved, indicating that frequency divider operating above 150 GHz could be potentially realized.

    Reference
    Related
    Cited by
Get Citation

NIU Bin, CHEN Wei, ZHANG You-Tao, WANG Yuan, LU Hai-Yan, CHANG Long, XIE Jun-Ling.0.5 μm InP/InGaAs DHBT for ultra high speed digital integrated circuit[J]. Journal of Infrared and Millimeter Waves,2016,35(3):263~266

Copy
Share
Article Metrics
  • Abstract:
  • PDF:
  • HTML:
  • Cited by:
History
  • Received:August 06,2015
  • Revised:January 08,2016
  • Adopted:January 12,2016
  • Online: July 28,2016
  • Published: July 28,2016
Article QR Code