Direct extraction method of equivalent circuit parameters for stacked transformer

doi:10.11972/j.issn.1001-9014.2016.02.009

Home > Archive>Volume 35, Issue 2, 2016 >172-176. DOI:10.11972/j.issn.1001-9014.2016.02.009

Direct extraction method of equivalent circuit parameters for stacked transformer
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                        10.11972/j.issn.1001-9014.2016.02.009
                    
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Affiliation:Shanghai Key Laboratory of Multidimensional Information Processing，School of Information Science and Technology, East China Normal University,Shanghai Key Laboratory of Multidimensional Information Processing，School of Information Science and Technology, East China Normal University,Shanghai Key Laboratory of Multidimensional Information Processing，School of Information Science and Technology, East China Normal University,Shanghai Key Laboratory of Multidimensional Information Processing，School of Information Science and Technology, East China Normal University
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Abstract:

A parameter-extraction approach for the stacked on-chip transformer, which combines the analytical approach and the empirical optimization procedure, was developed. The model parameters determined from the analytical expressions were considered as an initial guess of a subsequent optimization procedure leading to the final model parameters. Good agreement was obtained between simulated and measured results for a stacked transformer on silicon substrate in the frequency range 100 MHz~60 GHz.

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CHENG Ran, CHEN Bo, LUO Dan-Ting, GAO Jian-Jun. Direct extraction method of equivalent circuit parameters for stacked transformer[J]. Journal of Infrared and Millimeter Waves,2016,35(2):172~176

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Received:May 19,2015
Revised:December 14,2015
Adopted:September 23,2015
Online: May 11,2016
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