Improvement of phase change behavior in titanium-doped Ge2Sb2Te5 films
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Fudan University,Fudan University,Fudan University,Fudan University,Fudan University,Fudan University,Fudan University

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    Abstract:

    The influence of Ti dopant in the titanium-doped Ge2Sb2Te5 film upon its optical and structural characteristics has been investigated by spectroscopic ellipsometry and x-ray diffraction. Temperature-dependent resistance tests have further revealed that Ti-doped Ge2Sb2Te5 films have better thermal stability than undoped one. Based on the Arrhenius extrapolation results from data retention tests, the endurance temperature corresponding to 10-year data retention of a Ti-doped Ge2Sb2Te5 cell is higher than that of a common Ge2Sb2Te5 cell without dopant. All these experimental results have confirmed that the Ti-doped Ge2Sb2Te5 films are more suitable for the application in phase-change random access memory.

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ZHANG Ying, WEI Shen-Jin, YI Xin-Yu, CHENG Shuai, CHEN Kun, ZHU Huan-Feng, LI Jing, LV Lei. Improvement of phase change behavior in titanium-doped Ge2Sb2Te5 films[J]. Journal of Infrared and Millimeter Waves,2015,34(6):658~662

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History
  • Received:March 18,2015
  • Revised:September 30,2015
  • Adopted:May 27,2015
  • Online: December 01,2015
  • Published: