Zero-field spin splitting and high-field g-factor of an asymmetrical In0.53Ga0.47As/In0.52Al0.48As quantum well
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Shanghai Institute of Technical Physics, Chinese Academy of Sciencces,Shanghai Institute of Technical Physics, Chinese Academy of Sciencces,Shanghai Institute of Technical Physics, Chinese Academy of Sciencces,Shanghai Institute of Technical Physics, Chinese Academy of Sciencces,Shanghai Institute of Technical Physics, Chinese Academy of Sciencces,Shanghai Institute of Technical Physics, Chinese Academy of Sciencces,Shanghai Institute of Technical Physics, Chinese Academy of Sciencces

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    Abstract:

    This paper investigated the magnetotransport properties of the two-dimensional electron system in an asymmetrical In0.53Ga0.47As/In0.52Al0.48As quantum well, in which the expected beatings in the Shubinikov-de Haas oscillations of the longitudinal magnetoresistance Rxx were not observed. Zero-field spin splitting was extracted by measuring the weak anti-localization effect and the high field effective g-factor, g*, was extracted by fitting the tilt angle θ-dependent spacing of spin-splitted Rxx peaks. The Dingle plot is shown to be nonlinear, which can be attributed to the long-range scattering potential from the doping Be atoms near the substrate.

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XU Yong-Gang, LV Meng, CHEN Jian-Xin, LIN Tie, YU Guo-Lin, DAI Ning, CHU Jun-Hao. Zero-field spin splitting and high-field g-factor of an asymmetrical In0.53Ga0.47As/In0.52Al0.48As quantum well[J]. Journal of Infrared and Millimeter Waves,2015,34(6):688~693

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History
  • Received:November 01,2014
  • Revised:September 25,2015
  • Adopted:December 03,2014
  • Online: December 01,2015
  • Published: