CAO Gao-Qi
State Key Laboratory of Transducer Technology, Shanghai Institute of Technical Physics,Chinese Academy of SciencesTANG Heng-Jing
State Key Laboratory of Transducer Technology, Shanghai Institute of Technical Physics,Chinese Academy of SciencesLI Tao
State Key Laboratory of Transducer Technology, Shanghai Institute of Technical Physics,Chinese Academy of SciencesSHAO Xiu-Mei
State Key Laboratory of Transducer Technology, Shanghai Institute of Technical Physics,Chinese Academy of SciencesLI Xue
State Key Laboratory of Transducer Technology, Shanghai Institute of Technical Physics,Chinese Academy of SciencesGONG Hai-Mei
State Key Laboratory of Transducer Technology, Shanghai Institute of Technical Physics,Chinese Academy of Sciences, Shanghai 200083, ChinaState Key Laboratory of Transducer Technology, Shanghai Institute of Technical Physics,Chinese Academy of Sciences,State Key Laboratory of Transducer Technology, Shanghai Institute of Technical Physics,Chinese Academy of Sciences,State Key Laboratory of Transducer Technology, Shanghai Institute of Technical Physics,Chinese Academy of Sciences,State Key Laboratory of Transducer Technology, Shanghai Institute of Technical Physics,Chinese Academy of Sciences,State Key Laboratory of Transducer Technology, Shanghai Institute of Technical Physics,Chinese Academy of Sciences,State Key Laboratory of Transducer Technology, Shanghai Institute of Technical Physics,Chinese Academy of Sciences, Shanghai 200083, China
CAO Gao-Qi, TANG Heng-Jing, LI Tao, SHAO Xiu-Mei, LI Xue, GONG Hai-Mei. Temperaturedependent characteristics of ohmic contact in heterojunction InP/InGaAs detector[J]. Journal of Infrared and Millimeter Waves,2015,34(6):721~725
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