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Home > Archive>Volume 34, Issue 6, 2015 >721-725. DOI:10.11972/j.issn.1001-9014.2015.06.016
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Temperaturedependent characteristics of ohmic contact in heterojunction InP/InGaAs detector
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State Key Laboratory of Transducer Technology, Shanghai Institute of Technical Physics,Chinese Academy of Sciences,State Key Laboratory of Transducer Technology, Shanghai Institute of Technical Physics,Chinese Academy of Sciences,State Key Laboratory of Transducer Technology, Shanghai Institute of Technical Physics,Chinese Academy of Sciences,State Key Laboratory of Transducer Technology, Shanghai Institute of Technical Physics,Chinese Academy of Sciences,State Key Laboratory of Transducer Technology, Shanghai Institute of Technical Physics,Chinese Academy of Sciences,State Key Laboratory of Transducer Technology, Shanghai Institute of Technical Physics,Chinese Academy of Sciences, Shanghai 200083, China

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    Abstract:

    The contact characteristics of Au/ p-InP in hetero-junction InP/InGaAs detector were studied in this work. Under the annealing condition of 480℃ for 30s, the ohmic contact was formed with the room-temperature special contact resistance 3.84×10-4Ω·cm2. Temperature-dependent characteristics of ohmic contact were investigated. The results indicate that the special contact resistance increases with decreasing temperature, the current transmission mechanism at the interface is thermion-field emission mechanism (TFE) at the temperature of 243 K to 353 K; while below 240 K, the contact performance presents schottky property. By means of scanning electron microscope (SEM) and X-ray diffractometer, the diffusion degree and metallurgical reaction at the Au/InP interface were investigated，and the penetration degree is very heavy at the interface of sample after annealed at 480℃for 30s and the generation of Au10In3 produced by metallurgical reaction contributes to improve the contact performance of Au/p-InP.

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CAO Gao-Qi, TANG Heng-Jing, LI Tao, SHAO Xiu-Mei, LI Xue, GONG Hai-Mei. Temperaturedependent characteristics of ohmic contact in heterojunction InP/InGaAs detector[J]. Journal of Infrared and Millimeter Waves,2015,34(6):721~725

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History
  • Received:July 08,2014
  • Revised:May 26,2015
  • Adopted:September 24,2014
  • Online: December 01,2015
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