320×256 long wavelength infrared focal plane arrays based on type-Ⅱ InAs/GaSb superlattice

doi:10.11972/j.issn.1001-9014.2014.06.005

Home > Archive>Volume 33, Issue 6, 2014 >598-601. DOI:10.11972/j.issn.1001-9014.2014.06.005

320×256 long wavelength infrared focal plane arrays based on type-Ⅱ InAs/GaSb superlattice
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                        10.11972/j.issn.1001-9014.2014.06.005
                    
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Affiliation:Shanghai Institute of Technical Physics of the Chinese Academy of Sciences,Shanghai Institute of Technical Physics of the Chinese Academy of Sciences,Shanghai Institute of Technical Physics of the Chinese Academy of Sciences,Shanghai Institute of Technical Physics of the Chinese Academy of Sciences,Shanghai Institute of Technical Physics of the Chinese Academy of Sciences,Shanghai Institute of Technical Physics of the Chinese Academy of Sciences,Shanghai Institute of Technical Physics of the Chinese Academy of Sciences,Shanghai Institute of Technical Physics of the Chinese Academy of Sciences,Shanghai Institute of Technical Physics of the Chinese Academy of Sciences,Shanghai Institute of Technical Physics of the Chinese Academy of Sciences,Shanghai Institute of Technical Physics of the Chinese Academy of Sciences
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Abstract:

The growth and fabrication of a 320×256 type-Ⅱ InAs/GaSb superlattice long wavelength infrared focal plane array detector were reported. The superlattice material was grown on GaSb substrate using molecular beam epitaxy (MBE) technology with a PBIN structure. The structure of infrared absorption layer is 14ML (InAs)/7ML(GaSb), the focal plane array had a pixel size of 27μm×27μm and a pitch of 30μm. The device fabrication process consisted of mesa dry etching, side-wall passivation, metallization and flip-chip hybridization with readout integrated circuit (ROIC). At 77K, the detector had a 100% cut-off wavelength of 10.5μm, and a peak detectivity of 8.41×109cmHz1/2W-1. Concept proof of infrared imaging was also demonstrated with the focal plane array at liquid nitrogen temperature.

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XU Jia-Jia, CHEN Jian-Xin, ZHOU YI, XU Qing-Qing, WANG Fang-Fang, XU Zhi-Cheng, BAI Zhi-Zhong, JIN Chuan, CHEN Hong-Lei, DING Rui-Jun, HE Li.320×256 long wavelength infrared focal plane arrays based on type-Ⅱ InAs/GaSb superlattice[J]. Journal of Infrared and Millimeter Waves,2014,33(6):598~601

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Received:March 25,2014
Revised:April 14,2014
Adopted:April 17,2014
Online: November 27,2014
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