In order to extend the response of InGaAs short-wave infrared detectors to visible wavelength band, a InGaAs etch stop layer was added to the standard InGaAs epitaxial structure. After the fabrication of 32×32 pixel planar InGaAs detectors, the InP substrate was removed with mechanical thinning and chemical wet etching. The results indicated that the response of detectors after substrate removal covered the wavelength band from 400nm to 1700nm. Quantum efficiency is approximately 16% at 500nm, 54% at 850nm, and 91% at 1550nm. The detectors achieved almost the same low dark current as they did before the substrate removal process. The effect of parameters of epitaxial material on the quantum efficiency has been analyzed and simulated, and then the method to optimize the visible response of detectors was given.