Far-infrared reflectance spectra and photoelectric characteristics of InN0.01Sb0.99 thin films and the annealing effects
Author:
Affiliation:

Shanghai Institute of Technical Physics of the Chinese Academy of Sciences,Shanghai Institute of Technical Physics of the Chinese Academy of Sciences,Shanghai Institute of Technical Physics of the Chinese Academy of Sciences,Shanghai Institute of Technical Physics of the Chinese Academy of Sciences,Shanghai Institute of Technical Physics of the Chinese Academy of Sciences,Shanghai Institute of Technical Physics of the Chinese Academy of Sciences

Clc Number:

Fund Project:

  • Article
  • |
  • Figures
  • |
  • Metrics
  • |
  • Reference
  • |
  • Related
  • |
  • Cited by
  • |
  • Materials
  • |
  • Comments
    Abstract:

    The far-infrared reflectance spectra and the infrared detection characteristics of the new infrared material of InN0.01Sb0.99 thin films were reported. Far-infrared reflectance spectra, blackbody photoresponses and photocurrent spectra of the lattice mismatched InN0.01Sb0.99 film on GaAs substrate have been measured. A prototype wide-band infrared detector whose response peak at 4.4 μm and cut-off wavelength at 5.7 μm with the FWHM of 3.5 μm has been obtained. By investigating the annealing effects on the device performance, it is found that the crystal quality and the response capability are improved and the Moss-Burstein effect is reduced after annealing.

    Reference
    Related
    Cited by
Get Citation

HUANG Liang, JING You-LIang, LIU Xi-Hui, LI Qian, CHEN Ping-Ping, LI Zhi-Feng. Far-infrared reflectance spectra and photoelectric characteristics of InN0.01Sb0.99 thin films and the annealing effects[J]. Journal of Infrared and Millimeter Waves,2015,34(4):437~441

Copy
Share
Article Metrics
  • Abstract:
  • PDF:
  • HTML:
  • Cited by:
History
  • Received:March 04,2014
  • Revised:February 17,2015
  • Adopted:April 04,2014
  • Online: September 29,2015
  • Published: