A 270 GHz high performance waveguide detector utilizing a zero-bias Schottky diode
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电子科技大学电子科学技术研究院,Department of Microwave Devices and Integrated Circuits,Institute of Microelectronics,Chinese Academy of Sciences,Department of Microwave Devices and Integrated Circuits,Institute of Microelectronics,Chinese Academy of Sciences,Research Institute of Electronic Science and Technology,University of Electronic Science and Technology of China,Chengdu,Sichuan,Department of Microwave Devices and Integrated Circuits,Institute of Microelectronics,Chinese Academy of Sciences

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    Abstract:

    According to the structure of the InP diode, 3-D high frequency simulate software was adopted to create accurate physical model and matching circuits of the diode. Harmonic balance simulation was used to simulate the whole circuits. Based on this type of InP Schottky diode, a 270GHz zero bias detector was designed and measured for the first time in China. The measured responsivity is near 1600 V/W at 260 GHz, as well as 1400 V/W over 260~280GHz typically, which corresponds to typical noise equivalent power level(NEP)of 18 pW/ Hz1/2. The measured and simulated results are highly similar, indicating that this solution has the advantages of accurate, simplified and easily optimized.

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ZHANG Jian-Jun, ZHOU Jing-Tao, YANG Cheng-Yue, TIAN Zhong, JIN Zhi. A 270 GHz high performance waveguide detector utilizing a zero-bias Schottky diode[J]. Journal of Infrared and Millimeter Waves,2015,34(1):1~5

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History
  • Received:August 27,2013
  • Revised:January 17,2014
  • Adopted:January 20,2014
  • Online: April 03,2015
  • Published:
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