Conductivity type conversion in ion-beam-milled HgCdTe
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State Key Laboratories of Transducer Technology,Shanghai Institute of Technical Physics,Chinese Academy of Science,State Key Laboratories of Transducer Technology,Shanghai Institute of Technical Physics,Chinese Academy of Science,State Key Laboratories of Transducer Technology,Shanghai Institute of Technical Physics,Chinese Academy of Science,State Key Laboratories of Transducer Technology,Shanghai Institute of Technical Physics,Chinese Academy of Science,State Key Laboratories of Transducer Technology,Shanghai Institute of Technical Physics,Chinese Academy of Science,State Key Laboratories of Transducer Technology,Shanghai Institute of Technical Physics,Chinese Academy of Science,State Key Laboratories of Transducer Technology,Shanghai Institute of Technical Physics,Chinese Academy of Science,State Key Laboratories of Transducer Technology,Shanghai Institute of Technical Physics,Chinese Academy of Science

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    Abstract:

    After different loopholes are produced by Ar+ ion-beam in p-HgCdTe, width of n-type layer has been defined by the electron beam induced current measurement. It can be observed that under the same milling condition, the width of n-type layer depends on both of the mercury vacancy concentration and the volume of the milled-HgCdTe. Further study shows that the width of n-type layer linearly decreases with an increase of the mercury vacancy concentration if volume of the milled-HgCdTe is equal. Meanwhile, the width of n-type layer will linearly increases with volume of the milled-HgCdTe increasing if the mercury vacancy concentration is kept unchanged.

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XU Guo-Qing, LIU Xiang-Yang, WANG Reng, CHU Kai-Hui, TANG Yi-Dan, QIAO Hui, JIA Jia, LI Xiang-Yang. Conductivity type conversion in ion-beam-milled HgCdTe[J]. Journal of Infrared and Millimeter Waves,2014,33(5):477~481

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History
  • Received:May 27,2013
  • Revised:June 24,2013
  • Adopted:June 28,2013
  • Online: November 12,2014
  • Published: