A semi-analytical small signal parameter extraction method for millimeter HEMT
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Finisar Shanghai Inc, No.66 Huiqing Rd., Pudong New Dist,East China Normal University,No.500 Dongchuan Rd.,Minhang Dist
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Abstract:
A semi-analytical small signal parameter extraction method for high electron-mobility transistor(HEMT) under different bias conditions is presented. Based on test structure to determine the pad capacitance and parasitic inductances, the semi-analysis method is used to extract parasitic resistances and to improve the precision of the parasitic resistance in the small signal model. The agreement between the measured S-parameters and simulated ones is excellent over the frequency range up to 40GHz under multibias condition.
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FAN Cai-Yun, GAO Jian-Jun. A semi-analytical small signal parameter extraction method for millimeter HEMT[J]. Journal of Infrared and Millimeter Waves,2014,33(1):72~77