Infrared detectors with high fill-factor absorber and low offset low noise readout circuit
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institute of microelectronics chineses academy of science,institute of microelectronics chineses academy of science,Institute of Microelectronics, Chinese Academy of Sciences,Institute of Microelectronics, Chinese Academy of Sciences,Institute of Microelectronics, Chinese Academy of Sciences,Institute of Microelectronics, Chinese Academy of Sciences,Institute of Microelectronics, Chinese Academy of Sciences

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    Abstract:

    By using infrared detector and readout circuit, an uncooled infrared detecting system was developed. The detector using diode as the temperature sensor is compatible with integrated circuit process. A new device structure was used to improve the fill-factor from 20% to 80%. The area of micromachined structure is 35μm×35μm. The offset voltage of the readout circuit is 3μV. The output noise of the detector is 2μV. The responsivity of the detector is 7894.7V/W, specific detectivity of the detector is 1.56×109cmHz1/2/W, noise equivalent temperature difference of the detector is 330mK, and response time of the detector is 27 ms.

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HUANG Zhuo-Lei, WANG Wei-Bing, JIANG Wen-Jing, OU Wen, MING An-Jie, LIU Zhan-Feng, CHEN Da-Peng. Infrared detectors with high fill-factor absorber and low offset low noise readout circuit[J]. Journal of Infrared and Millimeter Waves,2014,33(1):50~54

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History
  • Received:January 06,2013
  • Revised:February 26,2013
  • Adopted:March 01,2013
  • Online: April 03,2014
  • Published: