Effect of Na2S2O3·5H2O concentration on the properties of Cu2ZnSn(S, Se)4 thin films fabricated by selenization of co-electroplated Cu-Zn-Sn-S precursors
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East China Normal University,Shanghai Center for Photovoltaics,Shanghai Institute of Technical Physics, Chinese Academy of Science,East China Normal University,Shanghai Center for Photovoltaics,Shanghai Center for Photovoltaics,Shanghai Center for Photovoltaics,Shanghai Institute of Technical Physics, Chinese Academy of Science,East China Normal University,East China Normal University

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    Abstract:

    Cu2ZnSn(S, Se)4 films were fabricated through post-selenization of Cu-Zn-Sn-S precursors co-electroplated by varied Na2S2O3·5H2O concentrations. The property of obtained films before and after selenization shows a close dependence on the concentration of Na2S2O3·5H2O. Only the film grown by 5 mM of Na2S2O3·5H2O shows a uniform surface with faceted grains, a Zn-poor composition, a single phased Cu2ZnSn(S, Se)4 structure and a 1.11 eV band gap evidencing by SEM, EDS, XRD, Raman and transmittance spectra. More than 5 mM of Na2S2O3·5H2O additive to the electrolyte yielded the films with rougher morphology and the presence of SnSex. Less than 5 mM of Na2S2O3·5H2O additive to the electrolyte resulted in the films with highly Zn-poor content and the primary formation of Cu2SnSe3.

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GE Jie, JIANG Jin-Chun, HU Gu-Jin, ZHANG Xiao-Long, ZUO Shao-Hua, YANG Li-Hong, MA Jian-Hua, CAO Meng, YANG Ping-Xiong, CHU Jun-Hao. Effect of Na2S2O3·5H2O concentration on the properties of Cu2ZnSn(S, Se)4 thin films fabricated by selenization of co-electroplated Cu-Zn-Sn-S precursors[J]. Journal of Infrared and Millimeter Waves,2013,32(4):289~293

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History
  • Received:August 24,2012
  • Revised:April 02,2013
  • Adopted:November 22,2012
  • Online: August 29,2013
  • Published: