128x128 infrared focal plane arrays based on Type-II InAs/GaSb superlattice

Home > Archive>Volume 31, Issue 6, 2012 >501-504

128x128 infrared focal plane arrays based on Type-II InAs/GaSb superlattice
DOI:
                        
Author:
                        
Affiliation:Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences,Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences,Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences,Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences,Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences,Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences,Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences,Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences,Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences,Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences
Clc Number:
Fund Project:

Article

Figures

Metrics

Reference

Cited by

Materials

Comments

Abstract:

In this paper, we reported the growth and fabrication of a 128 ? 128 infrared focal plane array detector made of type-II InAs/GaSb superlattice. The superlattice structure was grown on GaSb substrate using molecular beam epitaxy (MBE) technology. It consisted of 200 periods of 13ML(InAs)/9ML(GaSb) for longwave infrared detection. The pixel of the detector had a conventional PIN structure with a size of 40 μm?40 μm. The device fabrication process consisted of mesa etching, side-wall passivation, metallization and flip-chip hybridization with readout integrated circuit (ROIC). At 77 K, the detector had a 100% cut-off wavelength of 8.0 μm, and a peak detectivity of 6.0?109 cmHz1/2W-1. Concept proof of infrared imaging was also demonstrated with the focal plane array at liquid nitrogen temperature.

Reference

Cited by

Get Citation

XU Jia-Jia, JIN Ju-Peng, XU Qing-Qing, XU Zhi-Cheng, JIN Chuan, ZHOU Yi, CHEN Hong-Lei, LIN Chun, CHEN Jian-Xin, HE Li.128x128 infrared focal plane arrays based on Type-II InAs/GaSb superlattice[J]. Journal of Infrared and Millimeter Waves,2012,31(6):501~504

Copy

Article Metrics

Abstract:
PDF:
HTML:
Cited by:

History

Received:July 11,2012
Revised:September 27,2012
Adopted:September 25,2012
Online: November 21,2012
Published:

Home

Introduction

Editorial Board

Authors' Guidelines

Open Access

Downloads

Copyright

Contact Us

中文版

Get Citation

Share

Article Metrics

History