XU Jia-Jia
Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of SciencesJIN Ju-Peng
Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of SciencesXU Qing-Qing
Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of SciencesXU Zhi-Cheng
Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of SciencesJIN Chuan
Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of SciencesZHOU Yi
Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of SciencesCHEN Hong-Lei
Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of SciencesLIN Chun
Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of SciencesCHEN Jian-Xin
Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of SciencesHE Li
Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of SciencesKey Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences,Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences,Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences,Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences,Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences,Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences,Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences,Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences,Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences,Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences
In this paper, we reported the growth and fabrication of a 128 ? 128 infrared focal plane array detector made of type-II InAs/GaSb superlattice. The superlattice structure was grown on GaSb substrate using molecular beam epitaxy (MBE) technology. It consisted of 200 periods of 13ML(InAs)/9ML(GaSb) for longwave infrared detection. The pixel of the detector had a conventional PIN structure with a size of 40 μm?40 μm. The device fabrication process consisted of mesa etching, side-wall passivation, metallization and flip-chip hybridization with readout integrated circuit (ROIC). At 77 K, the detector had a 100% cut-off wavelength of 8.0 μm, and a peak detectivity of 6.0?109 cmHz1/2W-1. Concept proof of infrared imaging was also demonstrated with the focal plane array at liquid nitrogen temperature.
XU Jia-Jia, JIN Ju-Peng, XU Qing-Qing, XU Zhi-Cheng, JIN Chuan, ZHOU Yi, CHEN Hong-Lei, LIN Chun, CHEN Jian-Xin, HE Li.128x128 infrared focal plane arrays based on Type-II InAs/GaSb superlattice[J]. Journal of Infrared and Millimeter Waves,2012,31(6):501~504
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