GaSb Quantum Dots growth by Liquid Phase Epitaxy

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GaSb Quantum Dots growth by Liquid Phase Epitaxy
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Affiliation:National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics,National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences,National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences,National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences,National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences,National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences,National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences,National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences,Physics Department, Lancaster University, Lancaster LA1 4YB, UK,Physics Department, Lancaster University, Lancaster LA1 4YB, UK,Physics Department, Lancaster University, Lancaster LA1 4YB, UK
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Abstract:

The results on the growth of GaSb quantum dots (QDs) by liquid phase epitaxy (LPE) were reported. The dot Morphology in term of size, shape, density and uniform was studied by atomic force microscopy (AFM). The effects of growth conditions such as substrate, melt composition, and melt-substrate contact time on the morphology of GaSb QDS were investigated. It was found that it’s easier to get high quality GaSb QDs in condition of GaAs substrate, Ga-rich melt and shorter of contact time.

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HU Shu-Hong, QIU Feng, LV Ying-Fei, SUN Chang-Hong, WANG Qi-Wei, GUO Jian-Hua, DENG Hui-Yong, DAI Ning, ZHUANG Qian-Dong, YIN Min, KRIER A. GaSb Quantum Dots growth by Liquid Phase Epitaxy[J]. Journal of Infrared and Millimeter Waves,2013,32(3):220~224

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Received:April 25,2012
Revised:May 11,2012
Adopted:May 15,2012
Online: June 14,2013
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