Bismuth composition dependence of properties of Bi thin films
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Key Laboratory of Polar Materials and Devices,Ministry of Education,Department of Electronics,East China Normal University,500 Dongchuan Road,Laboratory for Microstructures, Shanghai University,Key Laboratory of Polar Materials and Devices,Ministry of Education,Department of Electronics,East China Normal University,500 Dongchuan Road,Key Laboratory of Polar Materials and Devices,Ministry of Education,Department of Electronics,East China Normal University,500 Dongchuan Road,Key Laboratory of Polar Materials and Devices,Ministry of Education,Department of Electronics,East China Normal University,500 Dongchuan Road

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    Abstract:

    The BixFeO3 films (0.80≤x≤ 1.20) were prepared by sol-gel technique on Si substrates. Effects of x variation on microstructures and optical properties of the BixFeO3 films are reported. It is shown that in the films with both insufficient and excess bismuth dosage, impurity phases such as Bi2Fe4O9 and iron oxide appeared. Raman spectra of the films were presented in the spectral range of 50~800cm-1. The refractive index (n) of the films decreases with increasing x at wavelength lower than 600nm, the extinction coefficients (k) of all films were comparable. The bandgaps of the films changed from 2.65eV to 2.76eV.

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LI Xiao-Xi, DENG Hong-Mei, ZHANG Jin-Zhong, YANG Ping-Xiong, CHU Jun-Hao. Bismuth composition dependence of properties of Bi thin films[J]. Journal of Infrared and Millimeter Waves,2014,33(1):19~22

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History
  • Received:March 23,2012
  • Revised:April 17,2012
  • Adopted:April 18,2012
  • Online: April 03,2014
  • Published:
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