32×32 element mesa-type back-illuminated InGaAs detector arrays were fabricated on the MBE- grown In0.8Al0.2As/In0.8Ga0.2As epitaxial materials by ICP etching. The characteristics of I-V curves, signal and noise were measured and analyzed. The results indicated that the thermal activation energy is 0.443eV at 210~300 K. By fitting with experimental data, R0A and I-V at different temperature were calculated theoretically. Mechanism of dark current was analyzed and some methods of reducing dark current were put forward. The detector arrays were In-bonded to readout integrated circuits (ROICs) and the characteristics of the FPA was measured. The result of the tested structure with different integrate capacitance indicates that the parasitical capacitance is about 10fF.