Simulation of transport properties in mid-infrared quantum cascade lasers
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State Key Laboratory of ASIC and System, Department of Microelectronics, Fudan University, Shanghai 200433,China,State Key Laboratory of ASIC and System, Department of Microelectronics, Fudan University, Shanghai 200433,China;,Crosslight Software Inc., 121-3989 Henning Dr. Burnaby, BC, V5C 6P8, Canada

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    Abstract:

    Simulation of transport properties in mid-infrared quantum cascade lasers (QCLs) with different structures at different temperatures based on non-local transport model is reported. With this model, drift-diffusion equations are solved with modification of current density by accounting for long-range carrier transport including quantum tunneling, mini-band tunneling and hot carrier transport in the device. The simulation compared the integrated models with experimental data and reasonable agreements with experiments have been obtained with some reasonable fitting parameters.

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LI Ying-Ying, RU Guo-Ping, LI Zhan-Ming. Simulation of transport properties in mid-infrared quantum cascade lasers[J]. Journal of Infrared and Millimeter Waves,2012,31(6):486~490

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History
  • Received:December 26,2011
  • Revised:July 04,2012
  • Adopted:January 19,2012
  • Online: November 21,2012
  • Published: