Anisotropy of two-photon absorption in [110]-cut nearly-intrinsic silicon crystal
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College of Communication Engineering,Jilin University,Changchun,College of Communication Engineering,Jilin University,Changchun,State Key Laboratory on Integrated Optoelectronics,College of Electronic Science and Engineering,Jilin University,Changchun,State Key Laboratory on Integrated Optoelectronics,College of Electronic Science and Engineering,Jilin University,Changchun,State Key Laboratory on Integrated Optoelectronics,College of Electronic Science and Engineering,Jilin University,Changchun,State Key Laboratory on Integrated Optoelectronics,College of Electronic Science and Engineering,Jilin University,Changchun,State Key Laboratory on Integrated Optoelectronics,College of Electronic Science and Engineering,Jilin University,Changchun,College of Communication Engineering,Jilin University,Changchun

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    Abstract:

    The anisotropy of photocurrent induced by two-photon absorption in [110]-cut nearly-intrinsic crystal silicon sample is investigated. The anisotropy coefficient of third-order nonlinear susceptibility of Si at wavelength of 1.3 μm is measured to be -0.25, and the ratio of χxxxx to χxxyy is 2.4. The independent element χxxxx is consequently obtained to be about 1.49×10-19 m2/V2 based on the previously observed result of χxxyy.

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LIU Xiu-Huan, LI Ming-Li, CHEN Zhan-Guo, JIA Gang, SHI Bao, ZHU Jing-Chen, MU Jin-Bo, LI Yi. Anisotropy of two-photon absorption in [110]-cut nearly-intrinsic silicon crystal[J]. Journal of Infrared and Millimeter Waves,2012,31(4):302~305

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History
  • Received:November 30,2011
  • Revised:May 14,2012
  • Adopted:February 16,2012
  • Online: August 28,2012
  • Published:
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