The noise of the extended wavelength InGaAs FPA with large perimeterarearatio

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The noise of the extended wavelength InGaAs FPA with large perimeterarearatio
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Affiliation:State Key Laboratories of Transducer Technology,Shanghai Institute of Technical Physics,Chinese Academy of Science,Graduate University of Chinese Academy of Sciences;State Key Laboratories of Transducer Technology,Shanghai Institute of Technical Physics,Chinese Academy of Science,Graduate University of Chinese Academy of Sciences;State Key Laboratories of Transducer Technology,Shanghai Institute of Technical Physics,Chinese Academy of Science,Graduate University of Chinese Academy of Sciences;State Key Laboratories of Transducer Technology,Shanghai Institute of Technical Physics,Chinese Academy of Science,State Key Laboratories of Transducer Technology,Shanghai Institute of Technical Physics,Chinese Academy of Science
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Abstract:

The total noises of focal plane array sensors, readout circuit and their coupling noise were theoretically analyzed. The temperature and integral time dependence of the noise were measured and analyzed for large perimeterarearatio of extended wavelength InGaAs FPA (38×500 μm2). The experimental results show that in certain conditions, FPA noise is not proportional to the square root of integral time. The relationship between FPA noise and dark current at different temperature were studied. Results show that the noises mainly come from 1/f noise and the current noise at the input stage of readout circuit.

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HUANG Song-Lei, ZHANG Wei, HUANG Zhang-Cheng, XU Zhong-Hua, FANG Jia-Xiong. The noise of the extended wavelength InGaAs FPA with large perimeterarearatio[J]. Journal of Infrared and Millimeter Waves,2012,31(3):235~238

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Received:March 24,2011
Revised:April 13,2011
Adopted:April 14,2011
Online: July 02,2012
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