Effect of CH4 flow rate on the optical properties of Boron-doped a-SiC:H films
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National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese,Suntech Power Co., Ltd.,Suntech Power Co., Ltd.,Suntech Power Co., Ltd.,Suntech Power Co., Ltd.,Suntech Power Co., Ltd.,Suntech Power Co., Ltd.,National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese

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    Abstract:

    The effect of CH4 flow rate on the structural and optical properties of boron-doped amorphous silicon carbon films as window p-layer in the industrial hydrogenated amorphous silicon solar module was investigated. The p-layer amorphous hydrogenated silicon carbon films were deposited from SiH4-CH4 gas mixtures in the Applied Materials SUNFAB radio frequency-plasma enhanced chemical vapor deposition Gen8.5 system with dimensions of 2.2 m 2.6 m. Infrared and transmittance/reflectance spectra were employed to analyze the bond configurations and optical properties of the films associating with structures of the p-layer films which are sensitive to the deposition condition. The optical band gap of the p-layer films increased as the CH4 flow rate ranged from 3000 sccm to 8850 sccm with other deposition conditions unchanged. With increasing CH4 flow rate, the deposition rate of p-layer amorphous silicon carbon films decreased slowly, because of the reduction of SiH3 radical in the SiH4-CH4 plasmas. The uniformity of the hydrogenated amorphous silicon carbon films was also investigated, by sampling and analyzing the deposition rate on four different locations of the large area films.

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DOU Ya-Nan, HE Yue, MA Xiao-Guang, QIAO Qi, CHEN Xiao-Jing, WANG Yong-Qian, CHEN Robin, CHU Jun-Hao. Effect of CH4 flow rate on the optical properties of Boron-doped a-SiC:H films[J]. Journal of Infrared and Millimeter Waves,2012,31(1):5~10

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History
  • Received:March 03,2011
  • Revised:July 03,2011
  • Adopted:July 10,2011
  • Online: February 28,2012
  • Published: