High-k gate oxides integration of graphene based infrared detector
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State Key Lab of ASIC & System and School of Microelectronics,复旦大学,复旦大学,复旦大学,复旦大学,复旦大学,复旦大学,复旦大学
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Abstract:
This review gives an introduction to the discovery and fabrication of the graphene, back-gated and top-gated GFET with the possible tunable band-gap of 0~250 meV at room temperature for middle and far infrared detector application, radio frequency GFET application and other advanced high k gate oxides integration processes.
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ZHOU Peng, WEI Hong-Qiang, SUN Hai-Tao, YE Li, CHEN Lin, WU Dong-Peng, DING Shi-Jin, ZHANG Wei. High-k gate oxides integration of graphene based infrared detector[J]. Journal of Infrared and Millimeter Waves,2012,31(2):118~121