Dislocation reduction in CdTe/HgCdTe film prepared by MBE on Si substrate
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    Abstract:

    The dislocation movement model of HgCdTe/Si which is based on Masafumi's theory of GaAs/Si was modified and improved. Rapid thermal annealing is performed on HgCdTe/Si. The results of the experiments and the theoretical calculation agree closely. We have shown a reduction as much as one order of magnitude in the number of dislocations of CdTe/Si epilayers. The lowest etched pit density (EPD) values is 2.5?105cm-2 after 500 ℃ rapid thermal annealing for 1 min.

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SHEN Chuan, GU Ren-Jie, FU Xiang-Liang, WANG Wei-Qiang, GUO Yu-Ying, CHEN Lu. Dislocation reduction in CdTe/HgCdTe film prepared by MBE on Si substrate[J]. Journal of Infrared and Millimeter Waves,2011,30(6):490~494

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History
  • Received:January 19,2011
  • Revised:June 23,2011
  • Adopted:April 10,2011
  • Online: November 04,2011
  • Published: