Extended-wavelength 640×1 linear InGaAs detector arrays using N-on-P configuration for back illumination
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shanghai institute of technical physics of the Chinese academy of science,shanghai institute of technical physics of the Chinese academy of science,shanghai institute of technical physics of the Chinese academy of science,shanghai institute of technical physics of the Chinese academy of science,shanghai institute of technical physics of the Chinese academy of science,shanghai institute of technical physics of the Chinese academy of science,shanghai institute of technical physics of the Chinese academy of science,shanghai institute of technical physics of the Chinese academy of science,Shanghai Institute of Microsystem and Information Technology of the Chinese Academy of Sciences,shanghai institute of technical physics of the Chinese academy of science

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    Abstract:

    Back-illuminated 640×1 linear InGaAs detector arrays were fabricated on the In0.78Al0.22As/In0.78Ga0.22As material of N-on-P configuration by the inductively coupled plasma (ICP) etching. The photoelectric characteristics of the detector were investigated. The results indicated that the cutoff-wavelength and peak-wavelength are 2.36 μm and 1.92 μm, respectively, at room temperature. The average value of R0A is 16.0 Ω·cm2 and the quantum efficiency of the peak wavelength reaches to 37.5%. Otherwise, the average peak detectivity of linear detector array reaches to 2.01×1011 cmHz1/2/W, the response nonuniformity is about 8.77% and the defective pixel ratio is 0.6% for 1 ms of integrate time.

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ZHU Yao-Ming, LI Yong-Fu, LI Xue, TANG Heng-Jing, SHAO Xiu-Mei, CHEN Yu, DENG Hong-Hai, WEI Peng, ZHANG Yong-Gang, GONG Hai-Mei. Extended-wavelength 640×1 linear InGaAs detector arrays using N-on-P configuration for back illumination[J]. Journal of Infrared and Millimeter Waves,2012,31(1):11~14

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History
  • Received:December 05,2010
  • Revised:January 10,2011
  • Adopted:January 18,2011
  • Online: February 28,2012
  • Published: