256*1 element front-illuminated InGaAs detector arrays were fabricated by using MBE-grown p-InP/n-InGaAs/n-InP double-heterostructure epitaxial materials and were wire-bonded to 128*1 element odd and even readout integrated circuits(ROICs) in order to form near-infrared 256?1 element InGaAs focal plane arrays(FPAs).The inoperable pixels exist in the near-infrared InGaAs FPAs. In this paper, the inoperable pixels were classified and analyzed by the optical microscope, SEM and electrical measurements. The results show that the lower resistance of photosensitive detectors at the bias voltage of 0V, the damage and false bonding, and the thinner profile of passivation film cause the inoperable pixels. The near-infrared 256*1 element InGaAs FPAs without inoperable pixels were obtained by improving the structure of photodetectors and the technics of passavition film.