The effect of Si co-doping on defect-induced intrinsic magnetism in GaN
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    Abstract:

    Using the first principle method within the local spin density approximation, both the magnetism of defect induced in GaN and the effect of Si codoping on the magnetism in GaN with defect were investigated. It was found that defectinduced intrinsic magnetic moment of GaN is 3μB, while the magnetic moment is quenched to 2μB in Sicodoping GaN:Si. The magnetic moment decreases with the increase of the concentration of Si. The result is very helpful for experiments.

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ZHANG Lei, XING Huai-Zhong, HUANG Yan, ZHANG Hui-Yuan, WANG Ji-Qing. The effect of Si co-doping on defect-induced intrinsic magnetism in GaN[J]. Journal of Infrared and Millimeter Waves,2011,30(3):229~233

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History
  • Received:August 30,2010
  • Revised:November 14,2010
  • Adopted:November 14,2010
  • Online: June 14,2011
  • Published: