HgCdTe photodiode arrays passivated with CdTe Flim
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    Abstract:

    The results of HgCdTe long-wavelength infrared n -on-p planar photodiode arrays passivated by molecular beam epitaxy (MBE) in-situ grown CdTe film were presented in this paper. By mercury-vacancy p-type annealing, ion-implantation window exposure, ZnS ion-implantation barrier layer deposition, B -implantation, ion-implantation barrier layer removal, ZnS dielectric film deposition, metallization and indium-bump arrays fabrication, HgCdTe long-wavelength infrared n -on-p planar photodiode arrays using in-situ CdTe passivation was achieved from a Hg1-xCdxTe film covered with a layer of MBE in-situ grown CdTe film. Zero bias dynamic resistances of HgCdTe photodiode arrays using in-situ CdTe passivation were improved 1~2 times higher than those of non-in-situ CdTe passivation processed one, and the maximum dynamic resistances near small reverse biases were even increased by a factor of 30~40. Since their current-voltage curves were all measured at 78K, it is obvious that in-situ CdTe passivation was beneficial to suppress dark current of n -on-p planar photodiode by optimizing the interface between the HgCdTe detector and CdTe passivation layer, and then to enhance the performance of long-wavelength infrared photodiode arrays operating at small reverse biases.

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YE Zhen-Hua, HUANG Jian, YIN Wen-Ting, HU Wei-Da, FENG Jing-Wen, CHEN Lu, LIAO Qin-Jun, CHEN Hong-Lei, LIN Chun, HU Xiao-Ning, DING Rui-Jun, HE Li. HgCdTe photodiode arrays passivated with CdTe Flim[J]. Journal of Infrared and Millimeter Waves,2011,30(6):495~498

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History
  • Received:August 27,2010
  • Revised:April 11,2011
  • Adopted:October 11,2010
  • Online: November 03,2011
  • Published: