不同钝化层结构对HgCdTe热退火Hg空位调控影响研究
投稿时间:2021-07-06  修订日期:2021-08-19  点此下载全文
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沈川 中科院上海技术物理研究所 200083
刘仰融 中科院上海技术物理研究所 
孙瑞赟 中科院上海技术物理研究所 
卜顺栋 中科院上海技术物理研究所 
陈路 中科院上海技术物理研究所 200083
何力 中科院上海技术物理研究所 
中文摘要:对不同钝化层结构的分子束外延(MBE)生长的HgCdTe外延材料的Hg空位浓度控制进行研究。获得了更高Hg空位浓度调控范围的外延材料,为后续新型焦平面器件的研发提供基础。研究发现,在热退火过程中,HgCdTe外延材料的Hg空位浓度的变化随着钝化层结构的不同而发生改变。且这种改变是因为HgCdTe表层的钝化层的存在改变了原始热退火的平衡态过程。同时,通过二次离子质谱(SIMS)测试以及相应的理论拟合进行了验证。
中文关键词:碲镉汞、Hg空位、钝化层、热退火
 
Study on the Influence of Hg Vacancy Control of HgCdTe Materials with Different Passivation Layers through Thermal Annealing
Abstract:The control of Hg vacancy concentration in HgCdTe grown by MBE with different passivation layer structures was studied. Higher Hg vacancy concentration in HgCdTe was obtained, which provides a basis for the subsequent research and development of new focal plane devices. It was found that the change of Hg vacancy concentration in HgCdTe varies with the structure of passivation layer during thermal annealing. The change is because the existence of the passivation layer of the HgCdTe surface layer changes the equilibrium process of the original thermal annealing. At the same time, the secondary ion mass spectrometry (SIMS) test and the corresponding theoretical fitting were verified the results.
keywords:HgCdTe, Hg vacancy, passivation layer, thermal annealing
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