基于石墨烯-黑砷异质结构宽频段探测器
投稿时间:2021-06-24  修订日期:2021-08-19  点此下载全文
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作者单位邮编
张力波 东华大学 理学院上海 201620 201620
王林 中国科学院上海技术物理研究所上海 200083 200083
邢怀中 东华大学 理学院上海 201620 
基金项目:上海市自然科学基金项目(21ZR1402200,21ZR1473800)
中文摘要:近年来,二维层状材料,如石墨烯、黑磷、过渡金属硫族化合物等,以其独特的电子和光电子性质而备受相关领域研究者关注。二维材料的表面无悬挂键、不受晶格匹配的限制使其具有很大的自由度与同类材料构成范德华异质结。在本工作中,我们利用定点转移技术,制备出二维层状材料石墨烯-黑砷范德华异质结构的光电探测器制备,实现了从可见光-红外-微波的宽频段探测。其中在可见红外光辐射下,黑砷产生的光激发电子-空穴对被分离并注入石墨烯,显著降低了半导体黑砷和金电极之间的势垒,从而实现了有效的光电流提取;在微波频段下,由于两种材料塞贝克系数差异产生光热电效应而激发非平衡载流子,零偏下形成光电流。研究结果为二维层状材料的带隙工程应用于光子和光电子领域铺平了道路。
中文关键词:二维层状材料  范德华异质结  光电探测器
 
Broadband detector based on graphene-black arsenic heterostructure
Abstract:In recent years, two-dimensional layered materials, such as graphene, black phosphorus, transition metal dichalcogenides, etc., have attracted the attention of researchers in the relevant areas due to unique electronic and optoelectronic properties. Regardless of dangling bonds and lattice mismatch in surface, two-dimensional material has a great degree of freedom to form a van der Waals heterojunction with similar materials. Here, a graphene-black arsenic van der Waals heterostructure is fabricated by the fixed-point transfer technology, realizing the broadband detection from visible light-infrared-microwave. Among them, the photoexcited electron-hole pairs generated in the black arsenic are separated and injected into the graphene under visible and infrared light radiation, which significantly reduces the potential barrier between the semiconductor black arsenic and the gold electrode, thereby realizing effective photocurrent extraction. In the microwave band, due to the difference in the Seebeck coefficient of the two materials, the non-equilibrium carriers are generated due to the photothermoelectric effect, forming the photocurrent under zero bias. The research results paved the way for bandgap engineering of two-dimensional layered materials to be applied to the fields of photonics and optoelectronics.
keywords:Two-dimensional layered material  van der Waals heterojunction  photodetector
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