面向MOCVD生长InAs/GaSb超晶格红外探测的InAs衬底表面制备
投稿时间:2021-06-08  修订日期:2021-08-25  点此下载全文
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作者单位邮编
刘丽杰 中国科学院半导体研究所 100083
赵有文 中国科学院半导体研究所 
黄勇 中科院苏州纳米技术与纳米仿生研究所 
赵宇 中科院苏州纳米技术与纳米仿生研究所 
王俊 中国科学院半导体研究所 
王应利 中国科学院半导体研究所 
沈桂英 中国科学院半导体研究所 
谢辉 中国科学院半导体研究所 
中文摘要:采用全反射x射线荧光光谱(TXRF)和x射线光电子能谱(XPS)研究了不同溶液组合清洗抛光InAs衬底表面的残留杂质和氧化物。清洗后的InAs表面经常检测到金属杂质Si、K和Ca,其浓度随溶液组合的变化而变化。在残余杂质浓度较高的InAs衬底表面测量了大量的颗粒(80nm尺寸)。提出了一种有效的湿法化学清洗工艺,使InAs衬底表面杂质较少,颗粒数量小,氧化层薄,有利于高质量的外延生长。
中文关键词:半导体,砷化铟,衬底,表面,清洗
 
Preparation of epi-ready InAs substrate surface for InAs/GaSb superlattice infrared detectors grown by MOCVD
Abstract:Total reflection X-ray fluorescence spectroscopy (TXRF) and X-ray photoelectron spectroscopy (XPS) have been used to investigate residual impurities and oxides on polished InAs substrate surface wet cleaned by different solution combination. Metal impurities Si, K and Ca are routinely detected on the cleaned InAs surface and their concentration change with the variation of solution combination. A large quantity of particles (80nm size) are measured on the InAs substrate surface with higher residual impurity concentration. An effective wet chemical cleaning procedure is presented to prepare InAs substrate surface with less residual impurity, small particle quantity and thin oxide layer, which are beneficial to high quality epitaxial growth.
keywords:Semiconductor, InAs, Substrate, Surface  cleaning
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