InP基共振隧穿二极管太赫兹振荡器的设计与实现
投稿时间:2021-04-25  修订日期:2021-05-17  点此下载全文
引用本文:
摘要点击次数: 332
全文下载次数: 0
作者单位邮编
刘军 中国电子科技集团公司第五十四研究所 100071
宋瑞良 中国电子科技集团公司第五十四研究所北京研发中心 
刘宁 中国电子科技集团公司第五十四研究所北京研发中心 
梁士雄 河北半导体技术研究所专用集成电路国家重点实验室 
中文摘要:对InP基共振隧穿二极管(RTD)的太赫兹振荡器技术进行研究,利用透镜封装技术对超过1 THz太赫兹振荡器进行设计实验验证。基于Silvaco软件对RTD模型进行仿真研究,分析了不同发射区掺杂浓度、势垒层厚度、隔离层厚度以及势阱层厚度等对器件直流特性的影响规律。对研制的RTD器件直流特性测试显示:峰值电流密度Jp为359.2 kA/cm2,谷值电流密度Jv为135.8 kA/cm2,峰谷电流比PVCR为2.64,理论计算的器件最大射频输出功率和振荡频率(fmax)分别为1.71 mW和1.49 THz。利用硅透镜对采用Bow-tie片上天线设计的太赫兹振荡器进行封装设计,测试得到振荡频率超过1 THz,输出功率2.57 μW,直流功耗8.33 mW,是国内首次报道超过1 THz的振荡器。
中文关键词:太赫兹,振荡器,共振隧穿二极管
 
Design and Realization of InP-based Resonant Tunneling Diode THz Oscillator
Abstract:Above 1 THz InP-based resonant tunneling diode (RTD) oscillator was designed and realization with Si-lens package. The RTD model was build and studied using Silvaco software including the influence of the doping concentration of emitter, the thickness of the barrier layer, space layer and well layer on the DC characteristics of the device. The DC measurement of the RTD shows peak current density Jp is 359.2 kA/cm2, valley current density Jv is 135.8 kA/cm2, peak-to-valley current ratio (PVCR) is 2.64, maximum RF output power of 1.71 mW and oscillation frequency (fmax) of 1.49 THz are theoretically calculated. The oscillator with an on-chip Bow-tie antenna has been packaged with Si-lens and the measurement shows the output power of 2.57 μW at an operation frequency of above 1 THz, the DC power consumption is 8.33 mW. This is the first reported oscillator of frequency above 1 THz in domestic.
keywords:THz, oscillators, resonant tunneling diode
  HTML  查看/发表评论  下载PDF阅读器

《红外与毫米波学报》编辑部