基于MIS电容器的Al2O3与In0.74Al0.26As的界面特性
投稿时间:2021-04-10  修订日期:2021-07-05  点此下载全文
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作者单位邮编
万露红 中国科学院上海技术物理研究所 200083
邵秀梅 中国科学院上海技术物理研究所 
李雪 中国科学院上海技术物理研究所 200083
顾溢 中国科学院上海技术物理研究所 
马英杰 中国科学院上海技术物理研究所 
李淘 中国科学院上海技术物理研究所 
中文摘要:采用In0.74Al0.26As / In0.74Ga0.26As / InxAl1-xAs异质结构多层半导体作为半导体层,制备了金属-绝缘体-半导体(MIS)电容器。其中, SiNx和SiNx / Al2O3分别作为MIS电容器的绝缘层。高分辨率透射电子显微镜和X射线光电子能谱的测试结果表明,与通过感应耦合等离子体化学气相沉积生长的SiNx相比,通过原子层沉积生长的Al2O3可以有效地抑制Al2O3和In0.74Al0.26As界面的In2O3的含量。根据MIS电容器的电容-电压测量结果,SiNx / Al2O3 / In0.74Al0.26As的快界面态密度比SiNx / In0.74Al0.26As的快界面态密度低一个数量级。其中,快界面态密度是采用高-低频法计算得到的。因此,采用原子层沉积生长的Al2O3作为钝化膜可以有效地降低Al2O3和In0.74Al0.26As之间的快界面态密度,从而降低In0.74Ga0.26As探测器的暗电流。
中文关键词:InAlAs  原子层沉积  Al2O3  SiNx  金属-绝缘体-半导体电容器  界面态密度
 
Interfacial properties between Al2O3 and In0.74Al0.26As epitaxial layer on MIS capacitors
Abstract:Metal-Insulator-Semiconductor (MIS) capacitors were fabricated on In0.74Al0.26As/In0.74Ga0.26As/InxAl1-xAs heterostructure multilayer semiconductor materials. SiNx and SiNx/Al2O3 bilayer were applied as insulating layer to prepare MIS capacitors respectively. High-resolution transmission electron microscope (HRTEM) and X-ray photoelectron spectroscopy (XPS) measurements indicated that, compared with SiNx deposited by inductively coupled plasma chemical vapor deposition (ICPCVD), Al2O3 deposited by atomic layer deposition (ALD) can effectively suppresses In2O3 at the interface between Al2O3 and In0.74Al0.26As. According to the capacitance-voltage (C-V) measurement result of MIS capacitors, the fast interface state density (Dit) of SiNx/Al2O3/In0.74Al0.26As is one order of magnitude lower than that of SiNx/In0.74Al0.26As. The above results are calculated using the high-low frequency method. Therefore, it can be concluded that Al2O3 deposited by ALD as a passivation film can effectively reduce the interface state density between Al2O3 and In0.74Al0.26As, thereby reducing the dark current of p-In0.74Al0.26As/i-In0.76Ga0.24As/n-InxAl1-xAs photodiodes.
keywords:InAlAs, ALD, Al2O3, SiNx, MIS  capacitor, interface  state density.
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