阱内δ掺杂GaSbBi单量子阱红外发光效率的光致发光光谱研究
投稿时间:2021-04-07  修订日期:2021-05-17  点此下载全文
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作者单位邮编
马楠 上海师范大学 200234
窦程 中国科学院上海技术物理研究所 
王嫚 上海师范大学 
朱亮清 中国科学院上海技术物理研究所 
陈熙仁 中国科学院上海技术物理研究所 
刘锋 上海师范大学 
邵军 中国科学院上海技术物理研究所 200083
基金项目:国家自然科学基金项目(面上项目,重点项目,重大项目),上海市自然科学基金和科学仪器领域项目(18ZR1446100, 20142201000)、中国科学院上海技术物理研究所(CX-289)
中文摘要:采用变激发功率红外光致发光(Photoluminescence, PL)光谱方法研究四个不同阱内δ掺杂面密度的GaSb0.93Bi0.07/GaSb单量子阱(Single Quantum Well, SQW)及其非掺杂SQW参考样品。通过分析GaSbBi SQW和GaSb势垒/衬底成分的PL强度演化,发现阱内δ掺杂导致红外辐射效率显著降低,相对下降幅度约为33%-75%。进一步分析结果表明,发光效率下降来源于界面恶化引发的“电子损失”和阱内晶格质量下降导致的“光子损失”的共同作用。这一工作有望为稀Bi红外发光器件的性能优化提供帮助。
中文关键词:红外光致发光  GaSbBi  发光效率  阱内δ掺杂
 
Infrared emission efficiency of δ - doped GaSbBi single quantum well by photoluminescence spectroscopy
Abstract:In this work, excitation power-dependent infrared photoluminescence (PL) measurements were carried out on four GaSb0.93Bi0.07/GaSb single quantum well (SQW) samples with different in-well δ-doping density as well as the corresponding reference SQW samples without doping. PL integral-intensity evolutions of the GaSbBi SQW and the GaSb barrier/substrate show a significant decrease in the infrared emission efficiency caused by the in-well δ-doping. The doping-induced relative decrease rate is about 33%-75%. Further analysis indicates that the reduction of the infrared emission efficiency is a co-consequence of the "electron loss" caused by the interfacial deterioration and the "photon loss" caused by the GaSbBi lattice quality deterioration. This work may be helpful in optimizing the performance of dilute Bi infrared light-emitting devices.
keywords:infrared photoluminescence,GaSbBi, emission efficiency,in-well δ-doping
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