| 980nm大功率高阶光栅锥形半导体激光器 |
| 投稿时间：2021-02-07 修订日期：2021-03-15 点此下载全文 |
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| 基金项目:国家重点研发计划项目 ；中国科学院前沿科学重点研究项目；国家自然科学基金项目；吉林省科技厅项目 |
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| 中文摘要:为了获得高功率、窄线宽和近衍射极限输出的半导体激光器,采用高阶光栅(high order Bragg gratings,HOBGs)和主控振荡器的功率放大器(Master Oscillator Power-Amplifier,MOPA)结构设计并研制出一种980nm波段的HOBGs MOPA半导体激光器。这种HOBGs-MOPA半导体激光器是在条宽为5μm长1000μm的脊型波导上,制备了一组周期为11.37μm,沟槽宽度为2.36μm,光栅长度为100μm的高阶光栅结构,然后通过锥角为6°,长度为3000μm,宽度为320μm的锥形功率放大区(PA)输出,再采用COS封装技术,获得窄线宽半导体激光器模块。该激光器模块实现输出功率2.8W,边模抑制比大于30 dB,3 dB光谱线宽31pm,横向远场发散角仅为19.84°,光束质量因子M2为2.51的窄线宽激光输出。这种拥有简单工艺的高功率、高光束质量的激光光源更适用于作为单模光纤激光器的泵浦源以及其他相关应用。 |
| 中文关键词:半导体激光器 大功率 窄线宽 高阶光栅 |
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| 980nm high-power tapered semiconductor laser with highorder gratings |
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| Abstract:High Power, narrow line-width regrowth-free laser diode based on high order Bragg Gratings (HOBGs) and Master Oscillator Oscillator Power Amplifier (MOPA) is achieved at 980 nm. The device is fabricated only by standard i-line lithography with micron-scale precision, obtains an excellent performance at high injection current. The device structure consists of an 1000 μm-long 5 μm-wide ridge waveguide at front and a 3000 μm-long tapered waveguide with a full angle of 6°. A continuous-wave power of over 2.8W is achieved at 5A. The maximum continuous-wave power at single longitudinal-mode operation is up to 1.25W at 2.5A. Narrow line-width emission has been reached with a 3dB spectrum width less than 31pm. The high side mode suppression ratio is over 30dB. The lateral far field divergence angle is only 19.84°,the beam quality factor M2 is 2.51.It is more beneficial for single-mode fiber coupling as pumping sources and other applications which require high beam quality at high power with easy fabrication technique. |
| keywords:high power laser diode, high power,narrow line-width, high order Bragg Gratings |
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