晶格失配对GaAsSb/InP异质结中合金拉曼散射的温度依赖特性的影响
投稿时间:2021-01-29  修订日期:2021-03-16  点此下载全文
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作者单位邮编
储媛媛 上海理工大学 材料科学与工程学院 200000
刘莹妹 上海理工大学 材料科学与工程学院 
李生娟 上海理工大学 材料科学与工程学院 
徐志成 中国科学院上海技术物理研究所 红外成像材料与器件重点实验室 
陈建新 中国科学院上海技术物理研究所 红外成像材料与器件重点实验室 
王兴军 中国科学院上海技术物理研究所 红外物理国家重点实验室 
基金项目:国家自然科学基金(11874377);上海市自然科学基金(18ZR1445700)
中文摘要:通过在3K-300K的低温变温拉曼光谱的测量,对不同Sb组分的GaAsSb/InP异质结中的由Sb组分引起的声子非谐效应进行了拉曼散射的研究。实验发现,随着温度的降低,长光学声子峰位向高波数移动,当温度低于100K时,变化趋于平缓。分别利用三声子模型和四声子模型计算模拟了光学声子和温度的依赖关系,并和实验结果对比发现,与三声子模型相比,四声子模型与实验数据符合更好,表明温度依赖的拉曼散射峰位的变化必须考虑四次声子非谐振动。相对于晶格失配的样品S1(Sb=37.9%)和S3(Sb=56.2%),获得的声子非谐度在晶格匹配的样品S2(Sb=47.7%)中是最小的,同时通过对声子线宽的研究表明S2中声子寿命是最长的。结合低温光致发光的实验结果,证实了GaAsSb合金晶格振动的声子非谐效应和声子寿命不仅受合金无序散射的影响,同时受到和衬底晶格失配引入的线缺陷和缺陷的声子散射影响。
中文关键词:GaAsSb/InP异质结  非谐效应  声子寿命  四声子模型
 
Effect of lattice mismatch on the temperature dependence of Raman scattering in GaAsSb / InP heterostructures
Abstract:The phonon anharmonic effect caused by Sb in GaAsSb/InP heterojunction with different Sb components has been studied by measuring Raman spectra at 3K ~ 300K. It is found that with the decrease of temperature, the peak position of long optical phonon moves to the high wave number, and the change tends to be gentle when the temperature is lower than 100K. The relationship between the optical phonon and temperature is simulated by using the three-phonon model and the four-phonon model, respectively. Compared with the experimental results, the four-phonon model agrees better with the experimental data, which indicates that the change of the temperature dependent Raman scattering peak position must consider the four-phonon anharmonic vibration. Compared with the lattice mismatched samples S1 (Sb=37.9%) and S3 (Sb=56.2%), the phonon anharmonic obtained in the lattice matched sample S2 (Sb=47.7%) is the smallest, and the phonon lifetime in S2 is the longest by the study of phonon linearly. The phonon anharmonic effect and phonon lifetime of GaAsSb crystal lattice vibration are not only affected by the disordered scattering of the alloy, but also by the line defects and phonon scattering of the defects introduced by the mismatch with the substrate.
keywords:GaAsSb/InP heterojunction  Anharmonic effect  Phonon lifetime  The four-phonon model
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