InAs/GaSb II类超晶格红外探测器光敏元蚀刻表面特性研究
投稿时间:2020-08-04  修订日期:2020-08-14  点此下载全文
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作者单位E-mail
崔玉容 中国科学院上海技术物理研究所 szmdcyr@163.com 
基金项目:国家自然科学基金项目(面上项目,重点项目,重大项目),国家重点基础研究发展计划(973计划)
中文摘要:采用刻蚀技术形成台面结构的红外探测器光敏元,其表面漏电流和器件热稳定性与半导体蚀刻表面的特性密切相关。本文对制备的InAs/GaSb II类超晶格中波红外探测器台面蚀刻区域特性进行了研究报道。通过台面结栅控结构和快速热退火相结合的实验研究,发现热退火处理使得样品在温度80K,偏置电压-0.05V下的暗电流密度从2.17×10-7A / cm2上升至6.96×10-5A / cm2,并且有无退火样品的暗电流随偏置电压变化表现出明显的不同。退火导致光敏元台面侧壁电荷密度上升2.76×1012 cm-2,引起了表面漏电流的增加,利用X射线光电子能谱(XPS)发现退火后台面蚀刻区域Sb单质含量增加。
中文关键词:二类超晶格  快速热退火  栅控结构  X射线光电子能谱
 
Fabrication and characteristics of InAs/GaSb Type-II superlattice infrared detector pixel mesas
Abstract:The surface leakage current and thermal stability of the infrared detector are highly related to the sidewall surface of the mesa. This work focused on researching the sidewalls' properties of InAs/GaSb type-II superlattice middle-wavelength infrared detectors by gate-control techniques. It was found the I-V curves for samples with or without annealing showed significant difference at 80 K, and the dark current density of the annealing sample increased from 2.17×10-?7 ?A/cm2 to 6.96×10-5A/cm2 comparing with the sample without annealing at the bias of -?0.05 V. The results of gate-control experiment proved the surface fixed charge was increased by 2.76×1012cm-?2 after annealing, which caused severe surface tunneling leakage. And the XPS showed the elemental Sb increased after annealing.
keywords:Type-II superlattice  rapid thermal annealing  gate-control structure  X-ray photoelectron spectroscopy
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