InAs/GaSb II类超晶格长波红外探测器的表面处理研究
投稿时间:2020-07-09  修订日期:2020-08-08  点此下载全文
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作者单位E-mail
崔玉容 中国科学院上海技术物理研究所 szmdcyr@163.com 
基金项目:国家重点研发计划,国家自然科学基金,中国科学院青年创新促进会会员,上海市青年科技启明星项目
中文摘要:本文开展了InAs / GaSb II类超晶格长波红外探测器的表面处理研究。通过对不同处理工艺形成台面器件的暗电流分析,发现N2O等离子处理结合快速热退火(RTA)的优化工艺能够显著改善50%截止波长12.3μm的长波器件电学性能。在液氮温度,-0.05V偏置下,器件的暗电流密度从5.88 ×10-1A/cm2降低至4.09 ×10-2A/cm2,零偏下表面电阻率从17.7 Ωcm提高至284.4 Ωcm,有效降低侧壁漏电流。但是该表面处理后的器件在大反偏压下仍有较大的侧壁漏电,这可能是由于高浓度的表面电荷使得大反偏下侧壁有较高的隧穿电流。通过栅控结构器件的变栅压实验,验证了长波器件存在纯并联电阻及表面隧穿两种主要漏电机制。最后,通过暗电流拟合,可获得使用优化工艺的器件表面电荷浓度为3.72×1011cm-2。
中文关键词:二类超晶格  长波红外探测器  表面处理  暗电流分析  栅控结构  
 
Studies on the surface treatment of InAs/GaSb type-II super-lattice long-wave infrared detectors
Abstract:In this work, the surface treatment of InAs/GaSb type-II super-lattice long-wavelength infrared detectors is studied. An optimizing process of N2O plasma treatment and rapid thermal annealing was developed, which can improve the performance of long-wavelength detector with λ50% cut-off=12.3μm from 5.88 ×10-1A/cm2 to 4.09 ×10-2A/cm2 at liquid nitrogen temperature, -0.05V bias. Through variable area device array characterization, the sidewall leakage current was extracted. Under zero bias, the surface resistivity improved from 17.9Ωcm to 297.6 Ωcm. However, the sidewall leakage couldn’t be ignored under large inverse bias after optimizing process, where surface charge might induce the surface tunneling current. It is verified by gate-control structure that there are two main leakage mechanisms in long-wave device: pure sidewall parallel resistance and surface tunneling. At last, the surface charge was calculated to be 3.72×1011cm-2 by IV curve fitting after optimizing process.
keywords:Type-II superlattice, long wavelength photodetectors, surface treatment, dark current analysis, gate-control structure
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