免镇流电阻的非均匀发射极指间距设计对多指功率双极晶体管射频功率性能的改善研究
投稿时间:2020-06-18  修订日期:2020-07-01  点此下载全文
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作者单位E-mail
张正 北京工业大学信息学部 zhangzheng2015@emails.bjut.edu.cn 
张延华 北京工业大学信息学部 zhangyh@bjut.edu.cn 
金冬月 北京工业大学信息学部  
那伟聪 北京工业大学信息学部  
谢红云 北京工业大学信息学部  
基金项目:国家自然科学基金项目(面上项目,重点项目,重大项目)
中文摘要:论文对不添加镇流电阻的非均匀发射极条间距的多发射极条HBT的射频功率性能和表面温度分布进行了测量,并与常规采用镇流电阻的多发射极条功率HBT进行了比较。实验结果表明,对具有非均匀发射极条间距的多发射极条HBT,采用US QFI TMS红外测量系统测得的最高表面温度、温度分布均匀性以及采用射频测量系统测得的射频功率增益和功率附加效率,分别低于、好于和高于具有镇流电阻的多发射极条功率HBT的情况。这些结果的取得,得益于采用非均匀发射极条间距改善了多发射极条HBT的热电正反馈和不同发射极条之间的热耦合,以及摆脱了传统HBT加镇流电阻带来的对射频功率性能的负作用。
中文关键词:双极晶体管, 射频, 热稳定性, 功率增益, 功率附加效率, 多指
 
RF power performance improvement of multi-finger power bipolar transistor by non-uniform emitter finger spacing design without the use of emitter ballasting resistor
Abstract:In this paper, the RF power performance and surface temperature distributions for a multi-finger power hetero-junction bipolar transistor (HBT) with non-uniform emitter finger spacing (NUEFS) without the use of emitter-ballasting-resistor (EBR) are measured, and are compared with a multi-finger power HBT with EBR. The experiment results show that for the multi-finger power HBT with NUEFS, the highest surface temperature is lowered, the uniformity of surface temperature distributions measured by US QFI Infrared TMS is improved, the RF power gain and power-added-efficiency (PAE) are increased compared with the multi-finger power HBT with EBR respectively. These results could be attributed to the improvement in positive thermoelectric feedback and thermal coupling effects among the fingers, and the riddance of adverse impact from emitter-ballasting-resistor used in traditional power HBT.
keywords:bipolar  transistor, radio  frequency (RF), thermal  stability, power  gain, power-added-efficiency (PAE), multi-finger
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