高温热退火对多层P-on-N结构HgCdTe的界面影响研究
投稿时间:2020-05-11  修订日期:2020-05-26  点此下载全文
引用本文:
摘要点击次数: 223
全文下载次数: 0
作者单位E-mail
沈 川 红外材料与器件重点实验室 shenchuan@mail.sitp.ac.cn 
陈 路 红外材料与器件重点实验室  
王伟强 红外材料与器件重点实验室  
卜顺栋 红外材料与器件重点实验室  
刘仰融 红外材料与器件重点实验室  
何力 红外材料与器件重点实验室  
中文摘要:对高温热退火前后分子束外延(MBE)生长的多层P-on-N结构HgCdTe外延材料的界面变化进行研究。研究发现,高温热退火将引起HgCdTe外延材料界面层的改变,从而破坏原生结构。这种改变可以一定程度上通过工艺条件进行控制。同时,对热退火前后P-on-N结构变化进行了二维数值模拟,研究了不同变化对其能带结构和光电流的影响。
中文关键词:碲镉汞、P-on-N、界面结构、热退火、光电流
 
Effect of thermal annealing on the interface changes of multi-layer HgCdTe P-on-N materials grown by MBE
Abstract:The interface changes of multi-layer HgCdTe P-on-N epitaxial materials grown by molecular beam epitaxy (MBE) before and after high temperature thermal annealing were studied. It is found that high temperature thermal annealing causes the change of the interface layer of HgCdTe P-on-N structure and destroy the original designed structure. This change can be controlled to some extent by thermal annealing conditions. At the same time, the structural changes of P-on-N before and after thermal annealing are simulated numerically, and the effects of different changes on the energy band and light current are studied.
keywords:HgCdTe, P-on-N, interface, thermal  annealing, light  current
  HTML  查看/发表评论  下载PDF阅读器

版权所有:《红外与毫米波学报》编辑部