用于太赫兹成像的肖特基二极管三维结构研究
投稿时间:2020-05-07  修订日期:2020-05-30  点此下载全文
引用本文:
摘要点击次数: 21
全文下载次数: 0
作者单位E-mail
崔大圣 北京理工大学 dscui@bit.edu.cn 
杨佳铭 北京理工大学  
姚宏璇 北京理工大学  
吕昕 北京理工大学  
基金项目:国家自然科学基金项目(面上项目,重点项目,重大项目)
中文摘要:本文提出了一种简单、科学、有效的高截止频率肖特基势垒二极管设计方法。通过SMIC 180nm工艺制备的肖特基二极管的截止频率为800GHz,分析测试结果和仿真数据优化后的肖特基势垒二极管截止频率可以达到1Thz左右。完成了包括天线、匹配电路和肖特基势垒二极管的集成探测器,在220GHz下其测试响应率可达130V/W,等效噪声功率估计为400pw/√Hz。完成了陶瓷瓶内不可见液面的成像实验并取得了良好的效果。
中文关键词:互补金属氧化物半导体工艺,检波器,成像,肖特基二极管,太赫兹(THz)。
 
Three-Dimensional Structure Analysis of Schottky Barrier Diode in CMOS Technology for Terahertz Imaging
Abstract:A simple, scientific and effective design method for high cut-off frequency Schottky barrier diode is proposed and implemented. The cut-off frequency of the processed Schottky barrier diode is about 800 GHz, which can reach about 1 THz with the optimized parameters through the test results and simulation data in SMIC 180nm process. The integrated detector including antennas, matching circuit and Schottky barrier diode is completed, whose tested responsivity could achieve 130 V/W and noise equivalent power is estimated to be 400 pW/√Hz at 220 GHz. The imaging experiment of invisible liquid surface in ceramic bottles has been completed and good results have been achieved.
keywords:CMOS, detector, imaging, Schottky barrier diode, terahertz.
  HTML  查看/发表评论  下载PDF阅读器

版权所有:《红外与毫米波学报》编辑部