傅里叶变换红外拉曼光谱检测半导体薄膜下衬底特性
投稿时间:2020-02-01  修订日期:2020-03-13  点此下载全文
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作者单位E-mail
王炜 上海理工大学 材料科学与工程学院 916939046@qq.com 
陈熙仁 中国科学院上海技术物理研究所 红外物理国家重点实验室 xrchen@mail.sitp.ac.cn 
余灯广 上海理工大学 材料科学与工程学院 ydg017@usst.edu.cn 
邵军 中国科学院上海技术物理研究所 红外物理国家重点实验室 jshao@mail.sitp.ac.cn 
基金项目:国家自然科学基金(11974368, 61675224)、中国科学院上海技术物理研究所创新项目(CX-240)
中文摘要:高质量半导体薄膜是制备高性能光电器件的基础,其光电子性质很大程度受衬底所制约,实验检测薄膜下衬底性质,有助于薄膜生长优化。然而,表面薄膜覆盖后的衬底特性检测通常受到严重制约。本文报道一种傅里叶变换拉曼光谱方法,利用低光子能量红外激发光的深穿透特性,降低薄膜影响,有效获取薄膜下半导体衬底的拉曼散射信息。GaAs上外延CdTe薄膜演示分析表明,相对于常规拉曼光谱方法,CdTe薄膜拉曼散射被抑制而GaAs衬底信号得到显著增强,光谱信噪比超过70,可为半导体薄膜下衬底的实验测试乃至多层半导体纵向结构表征的有效新途径。
中文关键词:红外拉曼  傅里叶变换  CdTe/GaAs薄膜  信噪比
 
Fourier transform infrared Raman spectroscopy for probing semiconductor substrates beneath epitaxial films
Abstract:High-quality semiconductor thin films are the basis for high-performance optoelectronic devices, of which the optoelectronic properties are restricted by the substrates. Experimental evaluation of the substrate beneath the thin films is therefore crucial for optimizing film growth. Unfortunately, such evaluation of substrates is usually severely affected by the capping thin films. This paper reports a Fourier transform (FT) Raman spectroscopic method, which utilizes the deep penetration characteristics of infrared pumping light with low photon energy, reduces the influence of the capping film, and extracts the Raman scattering information of the semiconductor substrate effectively. Application to CdTe thin films on GaAs-substrate demonstrates suppression of the CdTe while enhancement of the GaAs-substrate Raman scattering, as compared to a conventional Raman method. The signal-to-noise ratio of the spectrum exceeds 70, indicating the FT-Raman method a feasible approach for experimentally probing semiconductor substrate beneath thin films and/or multilayer structure.
keywords:infrared  Raman, Fourier  transform, CdTe/GaAs  thin film, SNR
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