表面微结构的高响应度Si基近红外光电探测器
投稿时间:2019-12-08  修订日期:2020-02-05  点此下载全文
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作者单位E-mail
唐 玉 玲 苏州大学 电子信息学院 20184228006@stu.suda.edu.cn 
夏少杰 苏州大学 电子信息学院  
陈 俊 苏州大学 电子信息学院 junchen@suda.edu.cn 
基金项目:国家自然科学基金(61774108)
中文摘要:为了使Si基光电探测器应用到近红外光波段,并提升其对光的响应度。通过等离子体光刻在硅基光电探测器表面制备规则有序的微结构阵列,另外通过原子层沉积(ALD)在微结构表面生长一层Al2O3膜,研究它的抗反射和钝化作用。对比测量器件的表面反射率和I-V特性曲线,并计算器件在808nm近红外光下的光响应度。通过计算发现器件的响应度由最初的0.063A/W提高到0.83A/W。
中文关键词:Si基  光电探测器  微结构  近红外光  响应度
 
High Responsivity Si-Based Near Infrared Photodetector with Surface Microstructure
Abstract:In order to apply Si-based photodetectors in the near infrared band and improve their responsivity. A regular and orderly microstructure array was formed on the surface of silicon-based photodetectors by plasma lithography. In addition, an Al2O3 film was grown on the microstructure surface by atomic layer deposition (ALD) to study its anti-reflection and passivation effects. The surface reflectivity and I-V characteristic curves of the device were compared and the light responsivity of the device under 808nm near infrared light was calculated. It is found that the responsivity of the device is increased from 0.063A/W to 0.83A/W.
keywords:Si-based, Photodetector, Microstructure, Near  Infrared Light, Responsivity
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